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MTP4N50E

ON Semiconductor
Part Number MTP4N50E
Manufacturer ON Semiconductor
Description High Energy Power FET
Published Jan 16, 2016
Detailed Description MTP4N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced...
Datasheet PDF File MTP4N50E PDF File

MTP4N50E
MTP4N50E

Overview
MTP4N50E Designer’s™ Data Sheet TMOS E−FET.
™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain−to−source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperat...


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