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MTB60N06HD

ON Semiconductor
Part Number MTB60N06HD
Manufacturer ON Semiconductor
Published Jan 15, 2016
Description Power MOSFET
Detailed Description MTB60N06HD Preferred Device Power MOSFET 60 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand hi...
Datasheet PDF File MTB60N06HD PDF File

MTB60N06HD
MTB60N06HD


Overview
MTB60N06HD Preferred Device Power MOSFET 60 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured − Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) VDSS VDGR VGS VGSM ID ID IDM PD 60 60 ± 20 ± 30 60 42.
3 180 125 1.
0 2.
5 Operating and Storage Temperature Range TJ, Tstg − 55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.
3 mH, RG = 25 Ω) Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient, when mounted with the minimum recommended pad size EAS RθJC RθJA RθJA 540 1.
0 62.
5 50 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 1.
When mounted with the minimum recommended pad size.
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W °C http://onsemi.
com 60 AMPERES 60 VOLTS RDS(on) = 14 mΩ N−...


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