SMPS MOSFET - International Rectifier
Description
PD - 95535
SMPS MOSFET
IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters
l Lead-Free
VDSS
150V
RDS(on) max
0.
090Ω
ID
23A
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001)
l Fully Characterized Avalanche Voltage and Current
TO-220AB IRFB23N15D
D2Pak
TO-262
IRFS23N15D IRFSL23N15D
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
23 17 92 3.
8 136 0.
9 ± 30 4.
1
-55 to + 175
300 (1.
6mm from case ) 10 lbf•in (1.
1N•m)
Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Units
A
W
W/°C V
V/ns
°C
Notes through are on page 11
www.
irf.
com
1
7/20/04
IRFB/IRFS/IRFSL23N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
150 ––– –––
3.
0 ––– ––– ––– –––
––– ––– V VGS = 0V, ID = 250µA
0.
18 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.
090 Ω VGS = 10V, ID = 14A
––– 5.
5 V VDS = VGS, ID = 250µA
––– 25 ––– 250
µA
VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 150°C
––– 100 ––– -100
nA
VGS = 30V VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
gfs Forward Transconductance
Q...
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