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NTP8G206N

Part Number	NTP8G206N
Manufacturer	ON Semiconductor
Description	Power GaN Cascode Transistor
Published	Jan 13, 2016
Detailed Description	NTP8G206N Power GaN Cascode Transistor 600 V, 150 mW Features • Fast Switching • Extremely Low Qrr • Transphorm Inside...
Datasheet	NTP8G206N PDF File

Overview

NTP8G206N Power GaN Cascode Transistor 600 V, 150 mW Features • Fast Switching • Extremely Low Qrr • Transphorm Inside • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Power Dissipation – RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms VDSS VGS ID PD IDM 600 V ±18 V 17 A 12 96 W 60 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C +150 Lead Temperature for Soldering Leads TL 260 °C Stresses exceeding those listed in the Maximum R...

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NTP8G206N Power GaN Cascode Transistor - ON Semiconductor

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