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MTV16N50E

ON Semiconductor
Part Number MTV16N50E
Manufacturer ON Semiconductor
Description Power Field Effect Transistor
Published Jan 13, 2016
Detailed Description MTV16N50E Advance Information TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−M...
Datasheet PDF File MTV16N50E PDF File

MTV16N50E
MTV16N50E

Overview
MTV16N50E Advance Information TMOS E−FET.
™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe ope...


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