Power MOSFET - International Rectifier
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l Lead-Free
PD - 95530
IRF3711ZPbF IRF3711ZSPbF IRF3711ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 6.
0m: 16nC
Benefits
l Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiÃRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes through are on page 12 www.
irf.
com
TO-220AB IRF3711Z
D2Pak IRF3711ZS
Max.
20 ± 20
92 h 65 h
380 79 40 0.
53 -55 to + 175
300 (1.
6mm from case)
y y10 lbf in (1.
1N m)
Typ.
––– 0.
50 ––– –––
Max.
1.
89 ––– 62 40
TO-262 IRF3711ZL
Units V A
W W/°C
°C
Units °C/W
1
7/20/04
IRF3711Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ IDSS
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
20 ––– ––– ––– 1.
55 ––– –––
––– 0.
013
4.
8 5.
9 2.
0 -5.
6 –––
––– ––– 6.
0 7.
3 2.
45 ––– 1.
0
V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA
emΩ VGS = 10V, ID = 15A eVGS = 4.
5V, ID = 12A
V VDS = VGS, ID = 250µA mV/°C
µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = ...
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