Power MOSFET - International Rectifier
Description
PD - 95448
SMPS MOSFET
Applications l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring l Lead-Free
VDSS
20V
IRL3716PbF IRL3716SPbF IRL3716LPbF
HEXFET® Power MOSFET
RDS(on) max
4.
0mΩ
ID
180A
Benefits l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.
5V VGS l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRL3716
Absolute Maximum Ratings
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
TJ , TSTG
Parameter Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
Junction and Storage Temperature Range
D2Pak IRL3716S
Max.
20
± 20 180 130 720 210 100 1.
4 -55 to + 175
TO-262 IRL3716L
Units V V
A
W W W/°C °C
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– 0.
50 ––– –––
Max.
0.
72 ––– 62 40
Units °C/W
Notes through are on page 11 www.
irf.
com
1
6/22/04
IRL3716/3716S/3716LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) IDSS
Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
20 ––– ––– ––– 1.
0 ––– ––– ––– –––
––– 0.
021 3.
0 4.
0 ––– ––– ––– ––– –––
––– V
––– V/°C
4.
0 4.
8
mΩ
3.
0 V
20 250
µA
200 -200
nA
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 90A VGS = 4.
5V, ID = 72A VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise speci...
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