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IRF6100

Part Number	IRF6100
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jan 13, 2016
Detailed Description	l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Sup...
Datasheet	IRF6100 PDF File

Overview

l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.
8mm) l Available Tested on Tape & Reel VDSS -20V PD - 93930F IRF6100 HEXFET® Power MOSFET RDS(on) max 0.
065Ω@VGS = -4.
5V 0.
095Ω@VGS = -2.
5V ID -5.
1A -4.
1A Description True chip-scale packaging is available from International Rectifier.
Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications.
These benefits, combined with the ruggedized device design , that International Rectifier...

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