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IXTV02N250S

Part Number	IXTV02N250S
Manufacturer	IXYS
Description	High Voltage Power MOSFETs
Published	Jan 13, 2016
Detailed Description	High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(...
Datasheet	IXTV02N250S PDF File

Overview

High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220 Maximum Ratings 2500 2500 V V ±20 V ±30 V 200 mA 600 mA 83 W - 55 .
.
.
+150 150 - 55 .
.
.
+150 °C °C °C 300 260 1.
13 / 10 11.
.
65 / 25.
.
14.
6 °C °C Nm/lb.
in N/lb.
6g 4g Symbol Test Conditions (...

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IXTV02N250S High Voltage Power MOSFETs - IXYS

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