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MTP6N60E

ON Semiconductor
Part Number MTP6N60E
Manufacturer ON Semiconductor
Description Power Field Effect Transistor
Published Jan 12, 2016
Detailed Description MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced...
Datasheet PDF File MTP6N60E PDF File

MTP6N60E
MTP6N60E

Overview
MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additiona...


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