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MSC3130T1

ON Semiconductor
Part Number MSC3130T1
Manufacturer ON Semiconductor
Description NPN RF Amplifier Transistor
Published Jan 10, 2016
Detailed Description MSC3130T1 Preferred Device NPN RF Amplifier Transistor Surface Mount MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base ...
Datasheet PDF File MSC3130T1 PDF File

MSC3130T1
MSC3130T1

Overview
MSC3130T1 Preferred Device NPN RF Amplifier Transistor Surface Mount MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Symbol PD TJ Tstg Value 15 10 3.
0 50 Max 200 150 −55 ~ +150 Unit Vdc Vdc Vdc mAdc Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Collector Cutoff Current (VCB = 10 Vdc, IE = 0) ICBO — Collector−Emitter Breakdown Voltage (IC = 2.
0 mAdc, IB = 0) VCEO 10 Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) VEBO 3.
0 DC Current Gain (Note 1) (VCE = 4.
0 Vdc, IC = 5.
0 mAdc) hFE 75 Collector−Emitter Saturation Voltage (IC = 20 mAdc, IB = 4.
0 mAdc) VCE(sat) − Current−Gain − Bandwidth Product (VCB = 4.
0 Vdc, IE = −5.
0 mAdc) fT 1.
Pulse Test: Pulse Width ≤ 300 ms, D.
C.
v 2%.
1.
4 Max 1.
0 − − 400 0.
5 2.
5 Unit mAdc Vdc...


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