Power MOSFET - IXYS
Description
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N08 IXFT 80N08
VDSS ID25 RDS(on)
= 80 V = 80 A = 9 mΩ
trr ≤ 200 ns
Symbol VDSS VDGR VGS VGSM I
D25
I
L(RMS)
I
DM
IAR EAR EAS dv/dt
P D
T J
TJM Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous
Transient
T C
= 25°C
Lead current limit
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
2
Ω
T C
= 25°C
1.
6 mm (0.
063 in) from case for 10 s
Mounting torque
TO-247 TO-268
Maximum Ratings
80 80 ±20 ±30 80 75 320 80 50 2.
5 5
V V V V A A A A mJ J V/ns
300 -55 to +150
150 -55 to +150
W °C °C °C
300 °C
1.
13/10 Nm/lb.
in.
6g 4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA
80 2.
0
VGS = ±20 VDC, VDS = 0
VDS = VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V 4.
0 V
±100 nA
50 µA 1 mA
9 mΩ
TO-247 AD (IXFH)
(TAB)
TO-268 ( IXFT) Case Style
G S
G = Gate D = Drain S = Source TAB = Drain
(TAB)
Features
l International standard packages l Low RDS (on) l Rated for unclamped Inductive load
switching (UIS) l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount l Space savings l High power density
© 2001 IXYS All rights reserved Downloaded from Elcodis.
com electronic components distributor
98810A (5/01)
Symbol
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min.
typ.
max.
VDS = 10 V; ID = 0.
5 • ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
35 55
4800 1675
590
S
pF pF pF
VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 2.
5 Ω (External),
50 75 95 31
ns ns ns ns
VGS = 10 V, VDS = 0.
5 • VDSS,...
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