MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• TO-92 Plastic-Encapsulate Transistors • Capable of 0. 4Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0. 1A • Collector-base Voltage 50V • Operating and storage junction temperature range: -55OC to +150OC
• Marking : S9014 • Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix "-HF"
S9014-B S9014-C S9014-D
NPN Silicon Transistors
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO
Collector-Base Breakdown Voltage (IC=100uAdc, IE=0)
Collector-Emitter Breakdown Voltage (IC=0. 1mAdc, IB=0)
Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0)
Collector Cutoff Current (VCB=50Vdc, IE=0)
Collector Cutoff Current (VCE=35Vdc, IB=0)
Emitter Cutoff Current (VEB=3. 0Vdc, IC=0)
ON CHARACTERISTICS
50 --- Vdc 45 --- Vdc 5. 0 --- Vdc --- 0. 1 uAdc --- 0. 1 uAdc --- 0. 1 uAdc
hFE DC Current Gain (IC=1. 0mAdc, VCE=5. 0Vdc)
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage (IC=100mAdc, IB=5. 0mAdc)
Base-Emitter Saturation Voltage (IC=100mAdc, IB=5. 0mAdc)
SMALL-SIGNAL CHARACTERISTICS
60 1000 ----- 0. 3 Vdc --- 1. 0 Vdc
fT Transistor Frequency
150 --- MHz
(IC=10mAdc, VCE=5. 0Vdc, f=30MHz)
CLASSIFICATION OF HFE
Rank
B
Range
100-300
C 200-600
D 400-1000
B
C
D
EB C
EB C
STRAIGHT LEAD BENT LEAD G BULK PACK AMMO PACK
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A . 175 . 185 4. 45 4. 70
B . 175 . 185 4. 45 4. 70
C . 500
--- 12. 70
---
D . 016 . 020 0. 41 0. 63
E . 135 . 145 3. 43 3. 68
G
. 095 . 173
. 105 2. 42 2. 67 Straight Lead . 220 4. 40 5. 60 Bent Lead
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