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IRF7103QPbF

International Rectifier
Part Number IRF7103QPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 28, 2015
Detailed Description PD - 96101C IRF7103QPbF Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°...
Datasheet PDF File IRF7103QPbF PDF File

IRF7103QPbF
IRF7103QPbF

Overview
...C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
VDSS 50V HEXFET® Power MOSFET RDS(on) max (mW) 130@VGS = 10V 200@VGS = 4.
5V ID 3.
0A 1.
5A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 The efficient SO-8 p...


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