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IRF7555PBF

International Rectifier
Part Number IRF7555PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 28, 2015
Detailed Description PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l...
Datasheet PDF File IRF7555PBF PDF File

IRF7555PBF
IRF7555PBF

Overview
PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.
1mm) l Available in Tape & Reel l Lead-Free S1 G1 S2 G2 Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 Top View VDSS = -20V RDS(on) = 0.
055Ω The new Micro8™ package has ...


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