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Si3459DV

Vishay
Part Number Si3459DV
Manufacturer Vishay
Description P-Channel MOSFET
Published Dec 18, 2015
Detailed Description P-Channel 60-V (D-S) MOSFET Si3459DV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.220 at VGS = - 10 ...
Datasheet PDF File Si3459DV PDF File

Si3459DV
Si3459DV

Overview
P-Channel 60-V (D-S) MOSFET Si3459DV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.
220 at VGS = - 10 V 0.
310 at VGS = - 4.
5 V ID (A) ± 2.
2 ± 1.
9 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 (4) S (3) G 2.
85 mm Ordering Information: Si3459DV-T1-E3 (Lead (Pb)-free) Si3459DV-T1-GE3 (Lead (Pb)-free and Halogen-free) (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current TC = 25 °C TC = 70 °C ID IDM Single Avalanche Current (L = 0.
1 mH) IAS Maximum Power Dissipationb Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C PD TJ, Tstg Limit - 60 ± 20 ± 2.
2 ± 1.
7 ± 10 -7 2 1.
3 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead t≤5s Steady State Steady State Notes: a.
Surface Mounted on FR4 board.
b.
t ≤ 5 s.
Symbol RthJA RthJL Typical 106 35 Maximum 62.
5 Unit V A W °C Unit °C/W Document Number: 70877 S09-0765-Rev.
D, 04-May-09 www.
vishay.
com 1 Si3459DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Source-Drain Rating Characteristicsb Continuous Current Pulsed Current Diode Forward Voltagea Source-Drain Reverse Recovery Time VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr VGS = 0 V, ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 60 V, VGS = 0 V ...


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