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Si3456BDV

Vishay
Part Number Si3456BDV
Manufacturer Vishay
Description N-Channel MOSFET
Published Dec 18, 2015
Detailed Description N-Channel 30-V (D-S) MOSFET Si3456BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.035 at VGS = 10 V 0...
Datasheet PDF File Si3456BDV PDF File

Si3456BDV
Si3456BDV

Overview
N-Channel 30-V (D-S) MOSFET Si3456BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
035 at VGS = 10 V 0.
052 at VGS = 4.
5 V ID (A) 6.
0 4.
9 FEATURES • Halogen free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 2.
85 mm Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free) Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 6Bxxx (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 6.
0 4.
5 4.
8 3.
6 Pulsed Drain Current IDM ± 30 Continuous Source Current (Diode Conduction)a IS 1.
7 0.
9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.
0 1.
3 1.
1 0.
7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 1...


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