IRG4BC30FD - International Rectifier
Description
PD -91451B
IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
G
Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
E
n-channel
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's .
Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Fast CoPack IGBT VCES = 600V
VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A
TO-220AB
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 31 17 120 120 12 120 ± 20 100 42 -55 to +150
300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m)
Units V
A
V W °C
Thermal Resistance
RqJC RqJC RqCS RqJA Wt
www.
irf.
com
Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-------------------------
Typ.
----------0.
50 ----2 (0.
07)
Max.
1.
2 2.
5 -----80 ------
Units °C/W
g (oz)
1
12/8/98
IRG4BC30FD
Electrical Characteristics @ TJ = 25°C (unless otherwise spe...
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