Simultaneous-Read/Write Flash Memory - Eon Silicon Solution
Description
EN29PL064/032
Purpose
Eon Silicon Solution Inc.
(hereinafter called “Eon”) is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs.
Eon is still keeping the promise of quality for all the products with the same as that of Eon delivered before.
Please be advised with the change and appreciate your kindly cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX Lot Number: XXXXX Date Code: XXXXX
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as an Eon product.
Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary, where supported.
Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Eon continues to support existing part numbers beginning with “Eon” and “cFeon” top marking.
To order these products, during the transition please specify “Eon top marking” or “cFeon top marking” on your purchasing orders.
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
1 ©2004 Eon Silicon Solution, Inc.
,
or modifications due to changes in technical specifications.
Rev.
G, Issue Date: 2009/04/02
www.
eonssi.
com
EN29PL064/032 64/32 Mbit (4/2 M x 16-Bit) CMOS 3.
0 Volt- only, Simultaneous-Read/Write Flash Memory
EN29PL064/032
Distinctive Characteristics
Architectural Advantages
• 64/32 Mbit Page Mode devices - Page size of 4 words: Fast page read access
from random locations within the page • Single power supply operation - Voltage range of 2.
7V to 3.
3V valid for MCP
product - Single Voltage, 2.
7V to 3.
6V for Read and Write
operations • Simultaneous Read/Write Operatio...
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