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IRLR110

Vishay
Part Number IRLR110
Manufacturer Vishay
Description Power MOSFET
Published Nov 21, 2015
Detailed Description IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) ...
Datasheet PDF File IRLR110 PDF File

IRLR110
IRLR110


Overview
IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.
0 V 6.
1 2.
0 3.
3 Single 0.
54 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR110, SiHLR110) • Straight Lead (IRLU110, SiHLU110) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHLR110-GE3 Lead (Pb)-free IRLR110PbF SiHLR110-E3 SnPb IRLR110 SiHLR110 Note a.
See device orientation.
DPAK (TO-252) SiHLR110TR-GE3 IRLR110TRPbFa SiHLR110T-E3a IRLR110TRa SiHLR110Ta DPAK (TO-252) SiHLR110TRL-GE3 IRLR110TRLPbF SiHLR110TL-E3 IRLR110TRLa SiHLR110TLa IPAK (TO-251) SiHLU110-GE3 IRLU110PbF SiHLU110-E3 IRLU110 SiHLU110 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at 5.
0 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Ju...


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