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IPB057N06N

Infineon Technologies
Part Number IPB057N06N
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 12, 2015
Detailed Description Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior th...
Datasheet PDF File IPB057N06N PDF File

IPB057N06N
IPB057N06N

Overview
Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V.
.
10V) IPB057N06N 60 V 5.
7 mW 45 A 32 nC 27 nC PG-TO263-3 Type IPB057N06N Package PG-TO263-3 Marking 057N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 45 A 45 V GS=10 V, T C=25 °C, R thJA =50K/W 17 Pulsed drain...


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