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APT12057B2LLG

Advanced Power Technology
Part Number APT12057B2LLG
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Nov 10, 2015
Detailed Description APT12057B2LL(G) APT12057LLL(G) 1200V 22A 0.570Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFE...
Datasheet PDF File APT12057B2LLG PDF File

APT12057B2LLG
APT12057B2LLG


Overview
APT12057B2LL(G) APT12057LLL(G) 1200V 22A 0.
570Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 R MOSFET B2LL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed and Qg.
Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
T-MAX™ TO-264 LLL • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS • Increased Power Dissipation D • Easier To Drive G • Popular T-MAX™ or TO-264 Package S All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT12057(G) 1200 22 88 ±30 ±40 690 5.
52 -55 to 150 300 22 50 3000 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.
5 ID[Cont.
]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA) MIN 1200 22 3 TYP MAX 0.
570 100 500 ±100 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Hand...


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