DatasheetsPDF.com

RCX510N25

Part Number	RCX510N25
Manufacturer	Rohm
Description	SILICON N-CHANNEL MOS FET
Published	Nov 4, 2015
Detailed Description	PRODUCTS TO-220FM TYPE RCX510N25 PAGE 1/4 1.TYPE RCX510N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS ...
Datasheet	RCX510N25 PDF File

Overview

PRODUCTS TO-220FM TYPE RCX510N25 PAGE 1/4 1.
TYPE RCX510N25 2.
STRUCTURE SILICON N-CHANNEL MOS FET 3.
APPLICATIONS SWITCHING 4.
ABSOLUTE MAXIMUM RATINGS [Ta=25℃] DRAIN-SOURCE VOLTAGE VDSS ・・・ 250V GATE-SOURCE VOLTAGE VGSS ・・・ ±30V DRAIN CURRENT CONTINUOUS PULSED ID IDP SOURCE CURRENT (BODY DIODE) CONTINUOUS PULSED IS ISP ・・・ ±51A* ・・・ ±204A* PW≦10μs DUTY CYCLE≦1% ・・・ 51A* ・・・ 204A* PW≦10μs DUTY CYCLE≦1% TOTAL POWER DISSIPATION PD ・・・ 40W (Tc=25℃) CHANNEL TEMPERATURE Tch ・・・ 150℃ RANGE OF STORAGE TEMPERATURE Tstg ・・・－55～150℃ 5.
THERMAL RESISTANCE CHANNEL TO CASE Rth(ch-c) ・・・ 3.
13oC/W * Limited only by maximum channel temperature allowed DESIGN CHECK APPROVAL DATE：2...

Similar Datasheet

RCX510N25 SILICON N-CHANNEL MOS FET - Rohm

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)