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K3396

Part Number	K3396
Manufacturer	Panasonic Semiconductor
Description	2SK3396
Published	Nov 2, 2015
Detailed Description	Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET For impedance conversion in low frequency Fo...
Datasheet	K3396 PDF File

Overview

Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor ■ Features • Low gate-source cutoff current IGSS • Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Power dissipation Channel temperature Storage temperature VGDO VGSO IG ID PD Tch Tstg −40 −40 10 1 100 125 −55 to +125 Unit V V mA mA mW °C °C 0.
33+–00.
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