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C5237

Hitachi
Part Number C5237
Manufacturer Hitachi
Description 2SC5237
Published Nov 1, 2015
Detailed Description 2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics ...
Datasheet PDF File C5237 PDF File

C5237
C5237

Overview
2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 400 MHz typ • High voltage and low output capacitance VCEO = 250 V, Cob = 3.
5 pF typ • Suitable for wide band video amplifier Outline TO-126FM 123 1.
Emitter 2.
Collector 3.
Base Free Datasheet http://www.
datasheet4u.
com/ 2SC5237 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC Junction temperature Storage temperature Note: 1.
TC = 25°C Tj Tstg Ratings 250 250 3 150 300 1.
4 8*1 150 –55 to +150 Unit V V V mA mA W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 250 — — V voltage IC = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO 250 — — V voltage IC = 1 mA, RBE = ∞ Collector cutoff current ICBO — — 1.
0 µA VCB = 200 V, IE = 0 Emitter cutoff current IEBO — — 10 µA VEB = 3 V, IC = 0 DC current transfer ratio hFE*1 60 — 200 — VCE = 10 V, IC = 10 mA Base to emitter voltage VBE — — 1.
0 V VCE = 10 V, IC = 50 mA Collector to emitter saturation VCE(sat) — — 1.
0 V voltage IC = 50 mA, IB = 5 mA Gain bandwidth product fT 300 400 — MHz VCE = 30 V, IC = 50 mA Collector output capacitance Cob — 3.
5 5.
0 pF VCB = 30 V, IE = 0, f = 1 MHz Note: 1.
The 2SC2537 is grouped by hFE and its specification is as follows.
B 60 to 120 C 100 to 200 2 Free Datasheet http://www.
datasheet4u.
com/ Collector Power Dissipation Pc (W) Collector Current I C (mA) Maximum Collector Dissipation Curve 8 6 Tc 4 2 1.
4W Ta 0 50 100 150 200 Case Temperature Tc (°C) Ambient Temperature Ta (°C) Area of Safe Operation 1000 1 shot pulse (Ta = 25 °C) 500 ic(peak) 200 I Cmax 100 50 = PW 10 ms 1 ms DC Oper(aTtcio=n 25 20 °C) 10 10 20 50 100 200 500 Collector to Emitter...


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