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IXTH14N80

IXYS
Part Number IXTH14N80
Manufacturer IXYS
Description MegaMOS MFET
Published Oct 27, 2015
Detailed Description MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions ...
Datasheet PDF File IXTH14N80 PDF File

IXTH14N80
IXTH14N80

Overview
MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.
70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Max.
lead temperature for soldering 300 1.
6 mm (0.
063 in) from case for 10 s Md Weight Mounting torque Maximum Ratings 800 800 ±20 ±30 14 56 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A W °C °C °C °C TO-247 AD G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain 1.
13/10 Nm/lb.
in.
6g Features l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon g...


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