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PTFB183408SV

Infineon Technologies
Part Number PTFB183408SV
Manufacturer Infineon Technologies
Description High Power RF LDMOS Field Effect Transistor
Published Oct 22, 2015
Detailed Description PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is ...
Datasheet PDF File PTFB183408SV PDF File

PTFB183408SV
PTFB183408SV

Overview
PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB183408SV Package H-37275G-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.
6A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, BW = 3.
84 MHz ...


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