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TC58BVG1S3HTA00

Part Number	TC58BVG1S3HTA00
Manufacturer	Toshiba
Description	2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
Published	Oct 19, 2015
Detailed Description	TC58BVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58BVG1S3HTA00 PDF File

Overview

TC58BVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG1S3HTA00 is a single 3.
3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG1S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data...

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