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2SK3302

Toshiba Semiconductor
Part Number 2SK3302
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Oct 19, 2015
Detailed Description 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Conve...
Datasheet PDF File 2SK3302 PDF File

2SK3302
2SK3302

Overview
2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 11.
5 Ω (typ.
) • High forward transfer admittance: |Yfs| = 0.
4 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3)...


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