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LP2307LT3G

LRC
Part Number LP2307LT3G
Manufacturer LRC
Description 16V P-Channel Enhancement-Mode MOSFET
Published Oct 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ RDS(ON...
Datasheet PDF File LP2307LT3G PDF File

LP2307LT3G
LP2307LT3G

Overview
LESHAN RADIO COMPANY, LTD.
16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.
5V, Ids@-4.
7A = 60 mΩ RDS(ON), Vgs@-2.
5V, Ids@-1.
0A = 100 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT– 23 (TO–236AB) D G S ORDERING INFORMATION Device Marking Shipping LP2307LT1G P07 3000/Tape&Reel LP2307LT3G P07 10000/Tape&Reel Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@T A=70℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Tota...


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