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LN9926LT1G

Part Number	LN9926LT1G
Manufacturer	LRC
Description	Dual N-Channel Enhancement-Mode MOSFET
Published	Oct 17, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V ...
Datasheet	LN9926LT1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.
5V specified MOSFET is a rugged gate version of advanced trench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V-10V) Features • RDS(on)=40mΩ@VGS=2.
5V, ID=5.
2A; RDS(on)=30mΩ@VGS=4.
5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications • We declare that the material of product compliance with RoHS requirements.
1 2 3 TSOP-6 6 5 4 4 Q2 5 6 Q1 3 Pin 1: Source 1 Pin...

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LN9926LT1G Dual N-Channel Enhancement-Mode MOSFET - LRC

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