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FQA8N90C_F109

Fairchild Semiconductor
Part Number FQA8N90C_F109
Manufacturer Fairchild Semiconductor
Description N-Channel QFET MOSFET
Published Oct 14, 2015
Detailed Description FQA8N90C_F109 — N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω Features • 8 A, 900 V, RD...
Datasheet PDF File FQA8N90C_F109 PDF File

FQA8N90C_F109
FQA8N90C_F109

Overview
FQA8N90C_F109 — N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.
9 Ω Features • 8 A, 900 V, RDS(on) = 1.
9 Ω (Max.
) @ VGS = 10 V, ID = 4 V • Low Gate Charge (Typ.
35 nC) • Low Crss (Typ.
12 pF) • 100% Avalanche Tested • RoHS Compliant May 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elect...


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