DatasheetsPDF.com

HY628400

Part Number	HY628400
Manufacturer	Hynix Semiconductor
Description	512K x 8bit CMOS SRAM
Published	Oct 12, 2015
Detailed Description	HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organize...
Datasheet	HY628400 PDF File

Overview

HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits.
The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology.
It is particulary well suited for use in high-density and low power system applications.
This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.
0V.
Product Voltage Speed Operation No.
(V) (ns) Current(mA) HY628400 5.
0 55/70/85 10 Note 1.
Normal : Normal Temperature 2.
Current value are max.
FEATURES • Fully static operation and Tri-st...

Similar Datasheet

HY628400 512K x 8bit CMOS SRAM - Hynix Semiconductor
HY628400A 512K x8 bit 5.0V Low Power CMOS slow SRAM - Hynix Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)