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SD723

Polyfet RF Devices
Part Number SD723
Manufacturer Polyfet RF Devices
Description RF POWER TRANSISTOR VDMOS
Published Oct 10, 2015
Detailed Description polyfet rf devices SD723 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband R...
Datasheet PDF File SD723 PDF File

SD723
SD723

Overview
polyfet rf devices SD723 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60.
0 Watts Push - Pull Package Style AD HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Total Device Dissipation 270 Watts Junction to Case Thermal Resistance o 0.
65 C/W ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Gate Voltage 200 oC oo -65 C to 150 C 15.
0 A 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V RF CHARACTERISTICS ( 60.
0 WATTS OUTPUT ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps Common Source Power Ga...


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