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B1217

Part Number	B1217
Manufacturer	Inchange Semiconductor
Description	2SB1217
Published	Oct 10, 2015
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1217 DESCRIPTION ·High Collector ...
Datasheet	B1217 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse -5 A IBB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @...

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