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K2796

Part Number	K2796
Manufacturer	Hitachi Semiconductor
Description	2SK2796
Published	Oct 6, 2015
Detailed Description	2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12...
Datasheet	K2796 PDF File

Overview

2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.
12Ω typ.
• 4V gate drive devices.
• High speed switching Outline DPAK |1 D G S ADE-208-534C (Z) 4th.
Edition Jun 1998 44 12 3 12 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1.
PW ≤ 10µs, duty cycle ≤ 1 % ...

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