Single N-channel Trench MOSFET - MagnaChip
Description
MDU1517 – Single N-Channel Trench MOSFET 30V
MDU1517
Single N-channel Trench MOSFET 30V, 100.
0A, 2.
9mΩ
General Description
The MDU1517 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDU1517 is suitable device for DC to DC converter and general purpose applications.
Features
VDS = 30V ID = 100.
0A @VGS = 10V RDS(ON) (MAX) < 2.
9mΩ @VGS = 10V < 4.
4mΩ @VGS = 4.
5V 100% UIL Tested 100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
May.
2011.
Version 1.
2
1
G S
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Rating
30 ±20 100.
0 96.
0 32.
9(3) 26.
2(3) 100 73.
5 47.
0 5.
5(3) 3.
5(3) 187 -55~150
Unit V V
A
A
W
mJ oC
Symbol RθJA RθJC
Rating 22.
7 1.
7
Unit oC/W
MagnaChip Semiconductor Ltd.
MDU1517 – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number MDU1517RH
Temp.
Range -55~150oC
Package PowerDFN56
Packing Tape & Reel
Quantity 3000 units
Rohs Status Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics Static Characteristics
Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS VGS(th) IDSS IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance Dynamic Characteristics
Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Drain-Source Body Diode Characteristics Source-Drain Diode Forward...
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