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IRGP4750D-EPbF

Part Number	IRGP4750D-EPbF
Manufacturer	International Rectifier
Description	Insulated Gate Bipolar Transistor
Published	Oct 4, 2015
Datasheet	IRGP4750D-EPbF PDF File

Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs pliant

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C 

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IRGP4750D-EPbF Insulated Gate Bipolar Transistor - International Rectifier

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