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IRF1405ZPbF

Part Number	IRF1405ZPbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Oct 3, 2015
Detailed Description	Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repeti...
Datasheet	IRF1405ZPbF PDF File

Overview

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 4.
9mΩ S ID = 75A TO-220AB ...

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IRF1405ZPbF HEXFET Power MOSFET - International Rectifier

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