DatasheetsPDF.com

RJK6026DPE

Renesas
Part Number RJK6026DPE
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Oct 3, 2015
Detailed Description RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • Hi...
Datasheet PDF File RJK6026DPE PDF File

RJK6026DPE
RJK6026DPE

Overview
RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse)...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)