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CEF6601

CET
Part Number CEF6601
Manufacturer CET
Description P-Channel MOSFET
Published Oct 2, 2015
Detailed Description CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86mΩ @VGS = -...
Datasheet PDF File CEF6601 PDF File

CEF6601
CEF6601

Overview
CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V.
RDS(ON) = 125mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS -60 VGS ±20 ID -19 -16d IDM -76 -64d PD 50 46 0.
4 0.
3 Ope...


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