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CEB4301

CET
Part Number CEB4301
Manufacturer CET
Description P-Channel MOSFET
Published Oct 2, 2015
Detailed Description CEP4301/CEB4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -25A, RDS(ON) =42mΩ @VGS = -10V. RDS...
Datasheet PDF File CEB4301 PDF File

CEB4301
CEB4301

Overview
CEP4301/CEB4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -25A, RDS(ON) =42mΩ @VGS = -10V.
RDS(ON) =65mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a VDS VGS ID IDM -40 ±20 -25 -17 -100 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 39 0.
31 Operating and Sto...


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