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CEB30P03

Part Number	CEB30P03
Manufacturer	CET
Description	P-Channel MOSFET
Published	Oct 2, 2015
Detailed Description	CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32mΩ @VGS = -10V. R...
Datasheet	CEB30P03 PDF File

Overview

CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32mΩ @VGS = -10V.
RDS(ON) =50mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a VDS VGS ID IDM -30 ±20 -30 -21 -120 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 50 0.
33 Operating and Store ...

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CEB30P03 P-Channel MOSFET - CET

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