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K2607

Toshiba Semiconductor
Part Number K2607
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel FET
Published Sep 30, 2015
Detailed Description 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converte...
Datasheet PDF File K2607 PDF File

K2607
K2607

Overview
2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 1.
0 Ω (typ.
) z High forward transfer admittance : |Yfs|= 7.
0 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetit...


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