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CEV2306

CET
Part Number CEV2306
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CEV2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 2A, RDS(ON) = 65mΩ @VGS = 4.5V. RDS(ON) = 80mΩ...
Datasheet PDF File CEV2306 PDF File

CEV2306
CEV2306

Overview
CEV2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 2A, RDS(ON) = 65mΩ @VGS = 4.
5V.
RDS(ON) = 80mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-323 package.
D DS G SOT-323(SC-70) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±8 Drain Current-Continuous Drain Current-Pulsed a ID 2 IDM 8 Maximum Power Dissipation PD 0.
42 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 360 Units V V A...


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