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CES2320

CET
Part Number CES2320
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CES2320 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.2A, RDS(ON) = 29mΩ (typ) @VGS = 10V. RDS(ON)...
Datasheet PDF File CES2320 PDF File

CES2320
CES2320

Overview
CES2320 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.
2A, RDS(ON) = 29mΩ (typ) @VGS = 10V.
RDS(ON) = 45mΩ (typ) @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Lead free product is acquired.
Rugged and reliable.
SOT-23 package.
D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 5.
2 IDM 20.
8 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units ...


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