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2SK3418

Renesas
Part Number 2SK3418
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Sep 29, 2015
Detailed Description 2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capab...
Datasheet PDF File 2SK3418 PDF File

2SK3418
2SK3418

Overview
2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.
3 mΩ typ.
• Capable of 4 V gate drive • High speed switching Outline TO-220AB D G S1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg REJ03G0407-0200 (Previous ADE-208-941 (Z)) Rev.
2.
00 Sep.
10.
2004 1.
Gate 2.
Drain (Flange) 3.
Source Ratings 60 ±20 85 340 85 60 308 110 150 – 55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Rev.
2.
00 Sep.
10, 2004 page 1 of 7 2SK3418 Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1.
Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 — — 1.
0 55 — — — — — — — — — — — — — — Typ — — — — 90 4.
3 6.
0 9770 1340 470 180 32 36 53 320 700 380 1.
0 70 Max — 10 ±0.
1 2.
5 — 5.
5 9.
0 — — — — — — — — — — — — Unit V µA µA V S mΩ mΩ pF pF pF nC nC nC ns ns ns ns V ns (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 VDS = 60 V, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 10 V, ID = 1 mANote1 ID = 45 A, VDS = 10 VNote1 ID = 45 A, VGS= 10 VNote1 ID = 45 A, VGS=4 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 85 A VGS = 10 V ID= 45 A RL = 0.
67 Ω IF = 85 A, VG...


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