2SD1115 - Hitachi Semiconductor
Description
2SD1115(K)
Silicon NPN Triple Diffused
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Application
High voltage switching, igniter
Outline
TO-220AB
1 23
1.
Base 2.
Collector
(Flange) 3.
Emitter
2 1
4.
5 kΩ (Typ)
250 Ω (Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC(peak) PC*1 Tj Tstg
Ratings 400 300 7 3 6 40 150 –55 to +150
Unit V V V A A W °C °C
2SD1115(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO voltage
400
Collector to emitter sustain voltage
VCEO(sus)
300
Emitter to base breakdown voltage
V(BR)EBO
7
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DC current transfer ratio
Collector to emitter saturation voltage
ICEO hFE VCE(sat)
— 500 —
Base to emitter saturation voltage
VBE(sat)
—
Turn on time Turn off time Note: 1.
Pulse test.
ton — toff —
Typ —
—
—
— — —
—
1.
0 22
Max —
—
—
100 — 1.
5
2.
0
— —
Unit V
Test conditions IC = 0.
1 mA, IE = 0
V IC = 2 A, PW = 50 µs, f = 50 Hz, L = 10 mH
V IE = 50 mA, IC = 0
µA VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 2 A*1
V IC = 2 A, IB = 20 mA*1
V
µs IC = 2 A, IB1 = –IB2 = 20 mA µs
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve 60
40
20
Collector current IC (A)
0 50 100 150 Case temperature TC (°C)
Area of Safe Operation
10
3
iC (peak) IC (max)
Ta = 25°C
1.
0
PPWW==11D0mCmsOs1p1sehsroahttoiot n (T C = 25°C)
0.
3
0.
1
0.
03
0.
01
0.
003
0.
005 0.
5 1.
0 2 5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
2
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Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V)
DC current transfer ratio hFE
Collector current IC (A)
Typical Output Characteristics 5
TC = 25°C
4 1.
0 0.
8 0.
6
3 0.
4
2 0.
2 mA
1
IB = 0 0 12345
Collector to emitter vol...
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