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SUD50N025-09BP

Part Number	SUD50N025-09BP
Manufacturer	Vishay
Description	N-Channel MOSFET
Published	Sep 21, 2015
Detailed Description	New Product SUD50N025-09BP Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) 0.00...
Datasheet	SUD50N025-09BP PDF File

Overview

New Product SUD50N025-09BP Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) 0.
0086 @ VGS = 10 V 0.
012 @ VGS = 4.
5 V ID (A)a, e 62 52 Qg (Typ) 18.
5 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion, High-Side – Desktop PC D RoHS COMPLIANT GDS Top View Drain Connected to Tab Ordering Information: SUD50N025-09BP—E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 70_C TA = 25_C TA = 70_C TC = 25_C TA = 25_C L = 0.
1 mH TC = 25_C TC = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 25 "20 62e 51e 26b, c 22b, c 100 37 6.
7b, c 28 39.
2 55 39 10b, c 7b, c –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t p 10 sec Steady State RthJA RthJC Notes: a.
Based on TC = 25_C.
b.
Surface mounted on 1” x 1” FR4 board.
c.
t = 10 sec d.
Maximum under steady state conditions is 50 _C/W.
e.
Calculated based on maximum junction temperature.
Package limitation current is 50 A.
Document Number: 73477 S–51449—Rev.
A, 01-Aug-05 Typical 12 2.
2 Maximum 15 2.
7 Unit _C/W www.
vishay.
com 1 SUD50N025-09BP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb VDS DVDS/TJ DVGS(th)/TJ...

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SUD50N025-09BP N-Channel MOSFET - Vishay

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