MOSFET - NXP Semiconductors
Description
LFPAK
PSMN012-25YLC
N-channel 25 V 12.
6 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev.
1 — 25 October 2011
Product data sheet
1.
Product profile
1.
1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package.
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.
2 Features and benefits
High reliability Power SO8 package, qualified to 175°C
Low parasitic inductance and resistance
Optimised for 4.
5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
1.
3 Applications
DC-to-DC converters Load switching
Synchronous buck regulator
1.
4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
VGS = 4.
5 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12
VGS = 4.
5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15
Min Typ Max Unit
- - 25 V
- - 33 A
- - 26 W
-55 -
175 °C
- 14.
1 16.
6 mΩ - 10.
7 12.
6 mΩ
- 1.
22 - nC - 3.
8 - nC
NXP Semiconductors
PSMN012-25YLC
N-channel 25 V 12.
6 mΩ logic level MOSFET in LFPAK using NextPower technology
2.
Pinning information
Table 2.
Pin 1 2 3 4 mb
Pinning information Symbol Description S source S source S source G gate D mounting base;
connected to drain
3.
Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK; Power-SO8)
Graphic symbol
D
G mbb076 S
Table 3.
Ordering information
Type number
Package
Name
PSMN012-25YLC
LFPAK; Power-SO8
Description plastic single-ended surface-mounted package; 4 leads
Version SOT669
PSMN012-25YL...
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